Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC

Journal of Applied Physics

Volumn 94, Issue 5, 2003, Pages 3004-3010

  Chen, X D ^a   Fung, S ^a   Ling, C C ^a   Beling, C D ^a   Gong, M ^b,c  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b SICHUAN UNIVERSITY   (China)

^c INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ATOMIC STRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ENERGY GAP; HYDROGEN; NEUTRON IRRADIATION; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

ANNEALING TEMPERATURES;

SILICON CARBIDE;

EID: 0141608047     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1598629     Document Type: Article

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