Identities of the deep level defects E1/E2 in 6H silicon carbide

Materials Science Forum

Volumn 445-446, Issue , 2004, Pages 135-137

  Ling, C C ^a   Chen, X D ^a   Gong, M ^b   Weng, H M ^c   Hang, D S ^d   Beling, C D ^a   Fung, S ^a   Lam, T W ^a   Lam, C H ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b SICHUAN UNIVERSITY   (China)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^d NANJING UNIVERSITY   (China)

Author keywords

DLTS; Positron Lifetime Spectroscopy; Silicon Carbide

Indexed keywords

ANNEALING; COMPLEXATION; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON IRRADIATION; ION IMPLANTATION; NEUTRON IRRADIATION; POSITRON ANNIHILATION SPECTROSCOPY;

CARBON VACANCY; E1/E2; ELECTRON DONORS; POSITRON LIFETIME SPECTROSCOPY;

SILICON CARBIDE;

EID: 2442471806     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (10)

1. A.A. Rempel, W. Sprengel, K. Blaurock, K.J. Reichle, J. Major and H.E. Schaefer, Phys. Rev. Lett. 89, 185501 (2002).
2. M.O. Aboelfotoh and J.P. Doyle, Phys. Rev. B 59, 10823 (1999).
3. M. Gong, S. Fung, C.D. Beling and Z.P. You, J. Appl. Phys. 85, 7604 (1999).
4. A. Kawasuso, R. Redmannm R. Krause-Rehberg, T. Frank, M. Weinder, G. Pensl, P. Sperr and H. Itoh, J. Appl. Phys. 90, 3377 (2001).
5. S. Arpiainen, K. Saarinen, P. Hautojärvi, L. Henry, M.F. Batthe and C. Corbel, Phys. Rev. B 66, 75206 (2002).
6. X. D. Chen, S. Fung, C. C. Ling, C. D. Beling, and M. Gong, J. Appl. Phys. 94, 3004 (2003).
7. T.A.G. Eberlein and R. Jones, Phys. Rev. Lett. 90, 225502 (2003).
8. C.C. Ling, C.D. Beling and S. Fung, Phys. Rev. B 62, 8016 (2000).
9. P. Kirkegaard, M. Eldrup, O.E. Morgenson and N.J. Pederson, Comput. Phys. Commun. 23, 307 (1981).
10. X.D. Chen, C.C. Ling, S. Fung, C.D. Beling and M.K. Lui, under preparation.