Si single-electron transistors with high voltage gain

IEICE Transactions on Electronics

Volumn E84-C, Issue 8, 2001, Pages 1061-1065

  Ono, Y ^a   Yamazaki, K ^a   Takahashi, Y ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

Quantum device; Silicon on insulator; Single electron transistor

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HIGH TEMPERATURE OPERATIONS; OXIDATION; OXIDES; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; TUNNEL JUNCTIONS;

GATE OXIDE; HIGH VOLTAGE GAIN; SILICON SINGLE ELECTRON TRANSISTORS; VERTICAL PATTERN DEPENDENT OXIDATION;

TRANSISTORS;

EID: 0035422143     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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