Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well

Solid-State Electronics

Volumn 47, Issue 3, 2003, Pages 425-429

  White, S L ^a   Thomas, S ^a   Joyce, T B ^a   Bullough, T J ^a   Chalker, P R ^a   Noakes, T C Q ^b   Bailey, P ^b   Mazzucato, S ^c   Balkan, N ^c  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b DARESBURY LABORATORY   (United Kingdom)

^c UNIVERSITY OF ESSEX   (United Kingdom)

Author keywords

Annealing; GaInNAs; MEIS

Indexed keywords

ANNEALING; ION BEAMS; QUANTUM WELL LASERS; SCATTERING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

ION SCATTERING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037345273     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00383-0     Document Type: Conference Paper

References (12)

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