Temperature and bias investigation of self heating effect and threshold voltage shift in pHEMT's

Microelectronics Journal

Volumn 36, Issue 8, 2005, Pages 732-736

  Alvaro, M ^a   Caddemi, A ^a   Crupi, G ^a   Donato, N ^a  

^a UNIVERSITY OF MESSINA   (Italy)

Author keywords

Forward transmission parameter; PHEMT; Self heating effect; Temperature; Threshold voltage

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ENERGY TRANSFER; HEATING; ISOTHERMS; KINETIC ENERGY; PHONONS; TEMPERATURE MEASUREMENT; THERMAL EFFECTS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

FORWARD TRANSMISSION PARAMETERS; HOT ELECTRONS; PHEMT; SELF-HEATING EFFECT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 23744487496     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2004.11.009     Document Type: Article

References (13)

1. R. Menozzi Hot electron effects and degradation of GaAs and InP HEMTs for microwave and millimetre-wave applications Semicond. Sci. Technol. 13 10 1998 1053 1063
2. S. Nuttinck, B.K. Wagner, B. Banerjee, S. Venkataraman, E. Gebara, J. Laskar, and H.M. Harris Thermal analysis of AlGaN-GaN power HFETs IEEE Trans. Microwave Theory Techniques 51 12 2003 2445 2452
3. S. Nuttinck, E. Gebara, J. Laskar, and H.M. Harris Study of self-heating effects, temperature-dependent modeling, and pulsed load-pull measurements on GaN HEMTs IEEE Trans. Microwave Theory Techniques 49 12 2001 2413 2420
4. A. Cidronali, G. Collodi, C. Accillaro, C. Toccafondi, G. Vannini, A. Santarelli, G. Manes, A scalable PHEMT model taking into account electromagnetic and electro-thermal effects, European Microwave Conference GaAs Symposium, 2003, pp. 251-254.
5. H.I. Fujishiro, N. Mikami, T. Takei, M. Izawa, T. Moku, K. Ohtuka, Self-heating effect on device characteristics of GaN/AlGaN HEMTs: 2D Monte Carlo device simulation, International Symposium on Compound Semiconductors, 2003 pp. 171-172.
6. C.J. Wei, Y.A. Tkachenko, and D. Bartle An accurate large-signal model of GaAs MESFET which accounts for charge conservation, dispersion, and self-heating IEEE Trans. Microwave Theory Techniques 46 11 1998 1638 1644
7. J.R. Tellez, B.P. Stothard, and M. Al-Daas Static, pulsed and frequency-dependent current/voltage characteristics of GaAs FETs IEE Proc. Circuits, Devices Systems 143 3 1996 129 133
8. J.W. Lee, and K.J. Webb A temperature-dependent nonlinear analytic model for AlGaN-GaN HEMTs on SiC IEEE Trans. Microwave Theory Techniques 52 1 2004 2 9
9. A. Ortiz-Conde, F.J. Garcia Sanchez, J.J. Liou, A. Cerdeira, M. Estrada, and Y. Yue A review of recent MOSFET threshold voltage extraction methods Microelectronics Reliability 42 2002 583 596
10. A. Caddemi, and N. Donato Temperature-dependent characterization and modeling of on wafer microwave transistors Microelectronics Reliability 42 2002 361 366
11. J. Rodriguez-Tellez, and B. Stothard Ambient temperature effects on DC behaviour of GaAs MESFET devices IEE Proc.-G 140 4 1993 305 311
12. R. Menozzi, M. Borgarino, P. Cova, Y. Baeyens, and F. Fantini The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs pHEMTs Microelectronics Reliability 36 11/12 1996 1899 1902
13. A. Caddemi, G. Crupi, and N. Donato A robust and fast procedure for the determination of the small signal equivalent circuit of HEMTs Microelectronics J. 35 5 2004 431 436