An accurate large-signal model of GaAs MESFET which accounts for charge conservation, dispersion, and self-heating

IEEE Transactions on Microwave Theory and Techniques

Volumn 46, Issue 11 PART 1, 1998, Pages 1638-1644

  Wei, Ce Jun ^a   Tkachenko, Yevgeniy A ^a   Bartle, Dylan ^a  

^a Alpha Industries Inc   (United States)

Author keywords

And linearity characteristics of the mesfet; Power; Waveform

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC CHARGE; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; EQUIVALENT CIRCUITS; HEATING; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSCONDUCTANCE;

CHARGE CONSERVATION; DRAIN CURRENT MODEL; FEEDBACK NETWORK; LARGE SIGNAL MODEL; TRIQUINT OWN MODEL;

MESFET DEVICES;

EID: 0032204540     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.734546     Document Type: Article

References (14)

1. P. Jansen, D. Schreurs, W. De Raedt, B. Nauwelaers, and M. Van Rossum, "Consistent small-signal and large-signal extraction techniques for heterojunction FET's," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 87-93, Jan. 1995.
2. C. J. Wei, J. W. Bao, and J. C. M. Hwang, "Novel experimentally based modeling for MESFET's having complex dispersion effects," in IEEE on Workshop Experimentally Based FET Modeling Related Nonlinear Circuit Design, Kassel, Germany, 1997, pp. 22.1-22.8.
3. H. Statz, P. Newman, I. Smith, R. Pucel, and H. Haus, "GaAs FET device and circuit simulation in SPICE," IEEE Trans. Electron Devices, vol. ED-34, pp. 160-169, Feb. 1987.
4. N. Scheinberg and E. Chisholm, "A capacitance model for GaAs MESFET's," IEEE]. Solid-State Circuits, vol. 26, pp. 1467-1470, Oct. 1991.
5. M. Berroth, "Circuit simulation for hetero-structure field-effect transistors," Ph.D. dissertation, Dept. Elect. Eng., Univ. Bochum, Bochum, Germany, 1991.
6. I. Angelov, H. Zirath, and N. Rorsman, "A new empirical nonlinear model for HEMT and MESFET devices," IEEE Trans. Microwave Theory Tech., vol. 40, pp. 2258-2266, Dec. 1992.
7. A. McCamant, G. McCormack, and D. Smith, "An improved GaAs MESFET model for SPICE," IEEE Trans. Microwave Theory Tech., vol. 38, pp. 822-824, June 1990.
8. C. J. Wei, W. J. Ho, and J. C. M. Hwang, "Large-signal modeling of self-heating, collector transit-time, and RF-breakdown effects in power HBT's," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 2641-2647, Dec. 1996.
9. K. Jeon, Y. Kwon, and S. Hong, "A frequency dispersion model of GaAs MESFET for large-signal applications," IEEE Microwave Guided Wave Lett., vol. 7, pp. 78-80, Mar. 1997.
10. R. Follman, R. Tempel, T. Sporkmann, and I. Wolff, "A new splinebased FET model for MESFET's and HEMT's," in 27th European Microwave Symp. Dig., Jerusalem, Israel, Sept. 1997, pp. 1360-1366.
11. C. J. Wei, Y. Lan, Y. A. Tkachenko, and J. C. M. Hwang, "A nonlinear high-frequency MESFET amplifier model verified by waveform and load-pull measurements," in 43rd ARFTG Conf. Dig., San Diego, CA, May 1994, pp. 117-120.
12. J. Kotz, "An improved capacitance model for GaAs MESFET's," in GaAslCSymp. Dig., Orlando, FL, Nov. 1996, pp. 171-174.
13. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, "A new method for determining the FET small-signal equivalent circuit," IEEE Trans. Microwave Theory Tech., vol. 36, pp. 1151-1159, July 1988.
14. C. J. Wei, Y. A. Tkachenko, and J. C. M. Hwang, "Non-invasive waveform probing for nonlinear network analysis," Microwave J., pp. 122-126, Feb. 1994.