Temperature-dependent noise characterization and modeling of on-wafer microwave transistors

Microelectronics Reliability

Volumn 42, Issue 3, 2002, Pages 361-366

  Caddemi, A ^a   Donato, N ^a  

^a UNIVERSITY OF MESSINA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; RELIABILITY; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS; THERMOELECTRICITY; TRANSISTORS;

MICROWAVE TRANSISTORS;

MICROWAVE DEVICES;

EID: 0036496541     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00004-5     Document Type: Article

References (7)

1. c superconductors at cryogenic temperatures down to 20 K
2. Development of accurate on-wafer cryogenic characterization techniques
3. Experimental investigation of the temperature dependence of GaAs FET equivalent circuits
4. Temperature-dependent modeling of gallium-arsenide MESFETs
5. Temperature dependent noisy models of pseudomorphic HEMTs
6. Determination of HEMT's noise parameters vs. temperature using two measurement methods
7. Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence