Static, pulsed and frequency-dependent current/voltage characteristics of GaAs FETs

IEE Proceedings: Circuits, Devices and Systems

Volumn 143, Issue 3, 1996, Pages 129-133

  Rodriguez Tellez, J ^a   Stothard, B P ^a   Al Daas, M ^a  

^a UNIVERSITY OF BRADFORD   (United Kingdom)

Author keywords

Field effect transistors; Frequency dispersion effects; Gallium arsenide devices; MESFETs

Indexed keywords

CALIBRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS; TRANSCONDUCTANCE;

BIAS CONDITIONS; CONDUCTANCE; FREQUENCY DISPERSION EFFECTS;

MESFET DEVICES;

EID: 0030164212     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:19960178     Document Type: Article

References (10)

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