Self-heating effect on device characteristics of GaN/AlGaN HEMTs: 2D Monte Carlo device simulation

IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn 2003-January, Issue , 2003, Pages 171-172

  Fujishiro, H I ^a   Mikami, N ^a   Takei, T ^a   Izawa, M ^b   Moku, T ^b   Ohtuka, K ^b  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b SANKEN ELECTRIC CO LTD   (Japan)

Author keywords

Aluminum gallium nitride; Electrons; Gallium nitride; HEMTs; MODFETs; Monte Carlo methods; Phonons; Scattering; Thermal conductivity; Voltage

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTRIC POTENTIAL; ELECTRONS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MODFETS; NITRIDES; PHONONS; SAPPHIRE; SCATTERING; SILICON CARBIDE; THERMAL CONDUCTIVITY;

DEVICE CHARACTERISTICS; DEVICE PERFORMANCE; DIFFERENT SUBSTRATES; GAN/ALGAN; MONTE CARLO DEVICE SIMULATIONS; SELF-HEATING; SELF-HEATING EFFECT;

MONTE CARLO METHODS;

EID: 33644567090     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.2003.1239960     Document Type: Conference Paper

References (2)

1. H.I.Fujishiro and T.Ishii, Proc. 2002 Asia Pacific Microwave Conference, vol.1, pp.338-341, 2002.
2. T.Ishii, M.Nakayama, T.Takei and H.I.Fujishiro, IEICE Trans. Electron., to be published.