Growth of GaAsSb/InP heterostructures by OMVPE

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 108-113

  Watkins, S P ^a   Bolognesi, C R ^a   Thewalt, M L W ^a   Kavanagh, K L ^a   Xu, X G ^a   Matine, N ^a   Wang, C X ^a   Liu, J ^a   Zhang, X ^a   Pitts, O J ^a   Stotz, J A H ^a   Wiersma, R D ^a   Najmi, S B ^a   Jiang, W Y ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DIFFRACTION; HETEROJUNCTION BIPOLAR TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; PASSIVATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

DOPING LEVELS; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DHBT); ELECTRICAL ACTIVATION; GROWTH RATE;

HETEROJUNCTIONS;

EID: 23744449315     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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