Electrical and optical properties of carbon-doped GaSb

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 16, 2003, Pages

  Wiersma, R D ^a   Stotz, J A H ^a   Pitts, O J ^a   Wang, C X ^a   Thewalt, M L W ^a   Watkins, S P ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; GALLIUM;

ARTICLE; CONDUCTANCE; ELECTRICITY; ELECTRON TRANSPORT; ENERGY; LIGHT SCATTERING; LOW TEMPERATURE; MEASUREMENT; MODEL; PHOTOLUMINESCENCE; POLARIMETRY; TEMPERATURE DEPENDENCE;

EID: 17344380879     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.165202     Document Type: Article

References (30)

1. C R. Bolognesi and S P. Watkins, Compound Semicond.6, 94 (2000).
2. A. Milnes and A Y. Polyakov, Solid-State Electron.36, 806 (1993).
3. M. Weyers, N. Putz, H. Heinecke, M. Heyen, H. Luth, and P. Balk, J. Electron. Mater.15, 57 (1986).
4. B T. Cunningham, M A. Haase, M J M. Collum, J E. Baker, and G E. Stillman, Appl. Phys. Lett.54, 1905 (1989).
5. R D. Wiersma, J A H. Stotz, O J. Pitts, C X. Wang, M L W. Thewalt, and S P. Watkins, J. Electron. Mater.30, 1429 (2001).
6. J M V. Hove, P P. Chow, M F. Rosamond, G F. Carpenter, and L A. Chow, J. Vac. Sci. Technol. B12, 1200 (1993).
7. X K. Chen, R D. Wiersma, C X. Wang, O J. Pitts, C. Dale, C R. Bolognesi, and S P. Watkins, Appl. Phys. Lett.80, 1942 (2002).
8. A. Baldereschi and N O. Lipari, Phys. Rev. B9, 1525 (1974).
9. A N. Baranov, P E. Dyshlovenko, A A. Kopylov, and V V. Sherstnyev, Solid State Commun.74, 429 (1990).
10. W. Jakowetz, D. Barthruff, and K W. Benz, Inst. Phys. Conf. Ser.33a, 41 (1977).
11. K. Hjelt and T. Tuomi, J. Cryst. Growth170, 794 (1997).
12. P S. Dutta and H L. Bhat, J. Appl. Phys.81, 5821 (1997).
13. P S. Dutta, V. Prasad, and H L. Bhat, J. Appl. Phys.80, 2847 (1996).
14. R A. Noack, W. Ruhle, and T N. Morgan, Phys. Rev. B18, 6944 (1978).
15. H. Fritzsche, Phys. Rev.99, 406 (1955).
16. G R. Johnson, B C. Caventt, T M. Kerr, P B. Kirby, and C E C. Wood, Semicond. Sci. Technol.3, 1157 (1988).
17. M. Balkanski and R. F. Wallis, Semiconductor Physics and Applications (Oxford University, New York, 2000).
18. M H. Kim, S S. Bose, B J. Skromme, B. Lee, and G E. Stillman, J. Electron. Mater.20, 671 (1991).
19. M. Lee, D J. Nicholas, K E. Singer, and B. Hamilton, J. Appl. Phys.59, 2895 (1986).
20. S C. Chen and Y K. Su, J. Appl. Phys.66, 350 (1998).
21. C. Ghezzi, R. Magnanini, A. Parisini, B. Rotelli, L. Tarricone, A. Bosacchi, and S. Franchi, Phys. Rev. B52, 1463 (1995).
22. J. Novak, S. Hasenohrl, M. Kucera, K. Hjelt, and T. Tuomi, J. Cryst. Growth183, 69 (1998).
23. M C. Wu and C C. Chen, J. Appl. Phys.72, 4275 (1992).
24. W. Ruhle, W. Jakowetz, C. Wolk, R. Linnebach, and M. Pilkuhm, Phys. Status Solidi B73, 255 (1976).
25. K D. Glinchuck, N M. Litovchenko, A V. Prokhorovich, and O H. Stril’chuk, Semiconductors35, 384 (2001).
26. S I. Kim, M S. Kim, S K. Min, and C. Lee, J. Appl. Phys.74, 6128 (1993).
27. D M. Eagles, J. Phys. Chem. Solids16, 76 (1960).
28. W. Jakowetz, W. Ruhle, K. Breuninger, and M. Pilkuhn, Phys. Status Solidi A12, 169 (1972).
29. G E. Stillman and C M. Wolfe, Thin Solid Films31, 69 (1976).
30. S P. Watkins and G. Haacke, Appl. Phys. Lett.59, 2263 (1991).