Suppression of hydrogen passivation in carbon-doped GaAsSb grown by MOCVD

Journal of Crystal Growth

Volumn 261, Issue 2-3, 2004, Pages 393-397

  Oda, Yasuhiro ^a   Watanabe, Noriyuki ^b   Uchida, Masahiro ^b   Sato, Michio ^a   Yokoyama, Haruki ^a   Kobayashi, Takashi ^a  

^a NTT CORPORATION   (Japan)

^b NTT Advance Technology Corporation   (Japan)

Author keywords

A1. Doping; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B1. Gallium compounds; B2. Semiconducting III V materials; B2. Semiconducting ternary compounds

Indexed keywords

ACTIVATION ENERGY; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PASSIVATION; PYROLYSIS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; X RAY DIFFRACTION ANALYSIS;

COVALENT BONDS; IONICITY; SEMICONDUCTING TERNARY COMPOUNDS;

SEMICONDUCTOR GROWTH;

EID: 0347415792     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.033     Document Type: Conference Paper

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