Doping of InSb and InAs using CBr4 during growth by gas source molecular beam epitaxy

Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 50-55

  Schoenfeld, W ^a   Antonell, M J ^a   Abernathy, C R ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BROMINE COMPOUNDS; CARRIER CONCENTRATION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE;

CARBON TETRABROMIDE; GAS SOURCE MOLECULAR BEAM EPITAXY; INDIUM ANTIMONIDE; INDIUM ARSENIDE; TRIETHYLINDIUM;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032098503     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00087-6     Document Type: Article

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