Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 237, Issue 1-2, 2005, Pages 217-222

  Liao, K F ^a   Chen, P S ^b   Lee, S W ^a   Chen, L J ^a   Liu, C W ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Annealing; Hydrogen implantation; SiGe; Strain relaxation

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; HYDROGEN; ION IMPLANTATION; SURFACE ROUGHNESS; THERMAL EFFECTS; ULTRAHIGH VACUUM;

HYDROGEN IMPLANTATION; METAL-OXIDE-SEMICONDUCTOR ELECTRONIC DEVICES; SIGE; STRAIN RELAXATION;

SILICON COMPOUNDS;

EID: 23644437836     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.04.094     Document Type: Conference Paper

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