Monolithic micropower amplifier using SiGe n-MODFET device

Electronics Letters

Volumn 39, Issue 12, 2003, Pages 884-886

  Vilches, A ^a   Fobelets, K ^a   Michelakis, K ^a   Despotopoulos, S ^a   Papavassiliou, C ^a   Hackbarth, T ^b   Konig U ^b  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; HETEROJUNCTIONS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

MONOLITHIC MICROPOWER AMPLIFIER; POWER GAIN;

POWER AMPLIFIERS;

EID: 0038206988     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030581     Document Type: Article

References (6)

1. O'Neill, A.G., and Antoniadis, D.A.: 'Investigation of Si/SiGe-based FET geometries for high frequency performance by computer simulation', IEEE Trans. Electron Devices, 1997, 44, pp. 80-88
2. Gluck, M., Hackbarth, T., König, U., Haas, A., Hock, G., and Kohn, E.: 'High fmax n-type Si/SiGe MODFETs', Electron. Lett., 1997, 33, (4), pp. 335-337
3. Papavassiliou, C., Fobelets, K., and Toumazou, C.: 'SiGe hetero-FET potential for micro-power applications', invited paper, IEICE Trans. Electron., (E00-A(2000))
4. Lenk, J.D.: 'Simplifier design of micropower and battery circuits' (Butterworth-Heinemann, December 1995) ISBN 0750695102
5. http://www.mwoffice.com/
6. Curtice, W.R.: 'A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers', IEEE Trans. Microw. Theory Tech., 1983, 33, p. 1383