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Volumn 1, Issue , 2003, Pages 407-410

A SiGe HEMT mixer IC with low conversion loss

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; SILICON ALLOYS;

EID: 33751502924     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMC.2003.1262307     Document Type: Conference Paper
Times cited : (2)

References (10)
  • 2
    • 0037426969 scopus 로고    scopus 로고
    • DC and high frequency performance of a 0.1μm n-type si/sio sgeo 4 modfet with fmax=l80ghz at 300k and fmax=230ghz at 50k
    • M. Enciso-Aguilar, F. Aniel, P. Crozat, R. Adde, H.-J. Herzog, T. Hackbarth, U. König, H. von Känel, "DC and high frequency performance of a 0.1μm n-type Si/Sio sGeo 4 MODFET with fmax=l80GHz at 300K and fmax=230GHz at 50K", El. Letters, vol. 39, pp. 149-150, 2003
    • (2003) El. Letters , vol.39 , pp. 149-150
    • Enciso-Aguilar, M.1    Aniel, F.2    Crozat, P.3    Adde, R.4    Herzog, H.-J.5    Hackbarth, T.6    König, U.7    Von Känel, H.8
  • 4
    • 0031233838 scopus 로고    scopus 로고
    • Integrated enhancement-and depletion-mode fet's in modulation-doped si/sige heterostructures
    • Sep
    • K. Ismail, J.O. Chu, M. Arafa, "Integrated Enhancement-and Depletion-Mode FET's in Modulation-Doped Si/SiGe Heterostructures", IEEE El. Dev. Letters, vol. 18, no. 9, pp. 435-437, Sep. 1997
    • (1997) IEEE El. Dev. Letters , vol.18 , Issue.9 , pp. 435-437
    • Ismail, K.1    Chu, J.O.2    Arafa, M.3
  • 5
    • 0032485172 scopus 로고    scopus 로고
    • Transimpedance amplifier based on si/sige modfets
    • March
    • M. Saxarra et. al., "Transimpedance amplifier based on Si/SiGe MODFETs", Electronics Letters, vol. 34, No. 5, pp. 499-500, March 1998
    • (1998) Electronics Letters , vol.34 , Issue.5 , pp. 499-500
    • Saxarra, M.1
  • 8
    • 0031342411 scopus 로고    scopus 로고
    • A scalable general-purpose model for microwave fets including dc/ac dispersion effects
    • December
    • V. I. Cojocaru, T. J. Brazil, "A Scalable General-Purpose Model for Microwave FETs Including DC/AC Dispersion Effects", IEEE MTT, vol. 45, pp. 2248-2255. December 1997
    • (1997) IEEE MTT , vol.45 , pp. 2248-2255
    • Cojocaru, V.I.1    Brazil, T.J.2
  • 9
    • 0024048518 scopus 로고
    • A new method for determining the fet small-signal equivalent circuit
    • Jul
    • G. Dambrine, A. Cappy, F. Héiiodore, E. Playez, "A New Method for Determining the FET Small-Signal Equivalent Circuit", IEEETrans. MTT, vol 36, no7, pp 1151-1159, Jul 1988
    • (1988) IEEETrans. MTT , vol.36 , Issue.7 , pp. 1151-1159
    • Dambrine, G.1    Cappy, A.2    Héiiodore, F.3    Playez, E.4
  • 10
    • 0026103702 scopus 로고
    • High-frequency equivalent circuit of gaas fet's for large-signal applications
    • Feb
    • M. Berroth, R. Bosch, "High-Frequency Equivalent Circuit of GaAs FET's for Large-Signal Applications", IEEETrans. MTT, vol. 39, no 2, pp. 224-229, Feb 1991
    • (1991) IEEETrans. MTT , vol.39 , Issue.2 , pp. 224-229
    • Berroth, M.1    Bosch, R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.