32 GHz MMIC distributed amplifier based on N-channel SiGe MODFETs

Electronics Letters

Volumn 39, Issue 20, 2003, Pages 1448-1449

  Abele, P ^a   Zeuner, M ^b   Kallfass, I ^a   Muller J ^b   Laban Hiwilepo, H ^a   Hackbarth, T ^b   Chrastina, D ^c   Von Kanel H ^c   Konig U ^b   Schumacher, H ^a  

^a UNIVERSITY OF ULM   (Germany)

^b DAIMLER AG   (Germany)

^c INFM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRON BEAM LITHOGRAPHY; REACTIVE ION ETCHING; WAVEGUIDES;

DISTRIBUTED AMPLIFIERS;

AMPLIFIERS (ELECTRONIC);

EID: 0142020816     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030953     Document Type: Article

References (4)

1. ZEUNER, M., HACKBARTH, T., ENCISO-AGUILAR, M., ANIEL, F., and VON KÄNEL, H.: 'Sub 100 nm gate technologies for Si/SiGe buried channel RF devices', Jpn. J. Appl. Phys., 2003, 42, pp. 2363-2366
2. max = 230 GHz at 50K', Electron. Lett., 2003, 39, pp. 149-150
3. MACK, T., HACKBARTH, T., HERZOG, H.-J., VON KÄNEL, H., KUMMER, M., RAMM, J., and SAUER, R.: 'Si/SiGe FETs grown by MBE on LEPECVD grown virtual substrate', Mater. Sci. Eng. B, 2002, B39, pp. 368-372
4. KALLFASS, I., ZEUNER, M., KÖNIG, U., SCHUMACHER, H., and BRAZIL, T.J.: 'A DC to 40 GHz large signal model for N-channel SiGe HFET transistors including low-frequency dispersion'. European Microwave Conference, Milano, Italy, 2002