SCOPUS 정보 검색 플랫폼

Volumn 20, Issue 11, 2003, Pages 2061-2063

Photoluminescence of Self-Assembled InAs/GaAs Quantum Dots Covered by InAlAs and InGaAs Combination Strain-Reducing Layer

(6) Fang, Zhi Dan a Gong, Zheng a Miao, Zhen Hua a Xu, Xiao Hua a Ni, Hai Qiao a Niu, Zhi Chuan a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITED STATES; III-V SEMICONDUCTORS; INDIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM DOTS;

COMPARATIVES STUDIES; ENERGY SEPARATIONS; FIRST EXCITED STATE; INAS-GAAS QUANTUM DOTS; LONG WAVELENGTH; LUMINESCENCE EMISSION; STACKINGS; STRAIN REDUCING LAYERS;

NANOCRYSTALS;

EID: 0242491565 PISSN: 0256307X EISSN: None Source Type: Journal
DOI: 10.1088/0256-307X/20/11/046 Document Type: Article

Times cited : (3)

References (15)

1
- 21544475375
- Arakawa Y and Sakaki H 1982 Appl. Phys. Lett. 40 939
- (1982) Appl. Phys. Lett. , vol.40 , pp. 939
- Arakawa, Y.¹ Sakaki, H.²

2
- 0034246530
- Ustinov V M and Zhukov A E 2000 Semicond. Sci. Technol. 15 R41
- (2000) Semicond. Sci. Technol. , vol.15
- Ustinov, V.M.¹ Zhukov, A.E.²

3
- 0033100686
- Park G, Shchikin O B and Deppe D G 1999 IEEE Photonics Technol. Lett. 11 301
- (1999) IEEE Photonics Technol. Lett. , vol.11 , pp. 301
- Park, G.¹ Shchikin, O.B.² Deppe, D.G.³

4
- 0001100515
- Sugawara M, Mukai K and Nakata Y 1999 Appl. Phys. Lett. 74 1561
- (1999) Appl. Phys. Lett. , vol.74 , pp. 1561
- Sugawara, M.¹ Mukai, K.² Nakata, Y.³

5
- 0034273435
- Park G, Shchikin O B and Deppe D G 2000 IEEE J. Quantum Electron. 36 1065
- (2000) IEEE J. Quantum Electron. , vol.36 , pp. 1065
- Park, G.¹ Shchikin, O.B.² Deppe, D.G.³

6
- 0002449384
- Shchekin O B, Park G, Huffaker D L and Deppe D G 2000 Appl. Phys. Lett. 77 466
- (2000) Appl. Phys. Lett. , vol.77 , pp. 466
- Shchekin, O.B.¹ Park, G.² Huffaker, D.L.³ Deppe, D.G.⁴

7
- 0036131653
- Jia R, Jiang D S, Liu H Y, Wei Y Q, Xu B and Wang Z G 2002 J. Crystal. Growth 234 354
- (2002) J. Crystal. Growth , vol.234 , pp. 354
- Jia, R.¹ Jiang, D.S.² Liu, H.Y.³ Wei, Y.Q.⁴ Xu, B.⁵ Wang, Z.G.⁶

8
- 79956060510
- Wei Y Q, Wang S M, Ferdos F, Vakusic J and Larsson A 2002 Appl. Phys. Lett. 81 1621
- (2002) Appl. Phys. Lett. , vol.81 , pp. 1621
- Wei, Y.Q.¹ Wang, S.M.² Ferdos, F.³ Vakusic, J.⁴ Larsson, A.⁵

9
- 0036639266
- Zhang Z Y, Xu B, Jin P, Meng X Q, Li Ch M, Ye X L and Wang Z G 2002 J. Appl. Phys. 92 511
- (2002) J. Appl. Phys. , vol.92 , pp. 511
- Zhang, Z.Y.¹ Xu, B.² Jin, P.³ Meng, X.Q.⁴ Li, Ch.M.⁵ Ye, X.L.⁶ Wang, Z.G.⁷

10
- 0035398178
- Niu Z C, Wang X D and Miao Z H 2001 J. Cryst. Growth 227 1062
- (2001) J. Cryst. Growth , vol.227 , pp. 1062
- Niu, Z.C.¹ Wang, X.D.² Miao, Z.H.³

11
- 23044525694
- Wang X D, Niu Z C, Feng S L and Miao Z H 2001 Chin. Phys. Lett. 18 608
- (2001) Chin. Phys. Lett. , vol.18 , pp. 608
- Wang, X.D.¹ Niu, Z.C.² Feng, S.L.³ Miao, Z.H.⁴

12
- 0242424030
- Kong Y C, Zhou D Y, Lan Q, Liu J L, Miao Z H, Feng S L and Niu Z C 2003 Chin. Phys. 12 97
- (2003) Chin. Phys. , vol.12 , pp. 97
- Kong, Y.C.¹ Zhou, D.Y.² Lan, Q.³ Liu, J.L.⁴ Miao, Z.H.⁵ Feng, S.L.⁶ Niu, Z.C.⁷

13
- 0037393290
- Lan Q, Niu Z C, Zhou D Y, Kong Y C, Wang X D, Miao Z H and Feng S L 2003 Physica E 17 114
- (2003) Physica E , vol.17 , pp. 114
- Lan, Q.¹ Niu, Z.C.² Zhou, D.Y.³ Kong, Y.C.⁴ Wang, X.D.⁵ Miao, Z.H.⁶ Feng, S.L.⁷

14
- 0033108407
- in Chinese
- Wang H, Zhu H J, Wang X D, Wang H L and Feng S L 1999 Chin. J. Semiconduct. 20 328 (in Chinese)
- (1999) Chin. J. Semiconduct. , vol.20 , pp. 328
- Wang, H.¹ Zhu, H.J.² Wang, X.D.³ Wang, H.L.⁴ Feng, S.L.⁵

15
- 0001542266
- Nishi K, Satio H, Sugou S and Lee J -S 1999 Appl. Phys. Lett. 74 1111
- (1999) Appl. Phys. Lett. , vol.74 , pp. 1111
- Nishi, K.¹ Satio, H.² Sugou, S.³ Lee, J.-S.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.