Characterization of rapid-thermal-annealed InAs/In0.15Ga 0.85As dots-in-well heterostructure using double crystal x-ray diffraction and photoluminescence

Applied Physics Letters

Volumn 80, Issue 21, 2002, Pages 3898-3900

  Krishna, S ^a   Raghavan, S ^a   Gray, A L ^b   Stintz, A ^a   Malloy, K J ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b Zia Laser Incorporated   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE COMPOSITION; DOTS IN A WELLS; DOUBLE CRYSTAL X RAY DIFFRACTION; GROWTH DIRECTIONS; IN-PLANE; INAS; OUT-OF-PLANE LATTICES; STRUCTURAL AND OPTICAL PROPERTIES; THERMALLY INDUCED STRAIN; X RAY ROCKING CURVE;

GALLIUM; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; X RAY DIFFRACTION;

X RAY DIFFRACTION ANALYSIS;

EID: 79955985172     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1482421     Document Type: Article

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