Defective state analysis in silicon carbide

ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems

Volumn , Issue , 2000, Pages 157-160

  Castaldini, A ^a   Cavallini, A ^a   Polenta, L ^a   Nava, F ^b   Canali, C ^a   Lanzieri, C ^c  

^a INFM   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c ALENIA SPAZIO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

MICROSYSTEMS; SEMICONDUCTOR DEVICES; SILICON; SILICON CARBIDE;

CAPACITANCE TRANSIENT; DEEP-LEVELS; DEFECT ANALYSIS; DEFECTIVE STATE; ELECTRICAL CHARACTERIZATION; TRANSPORT MECHANISM;

QUALITY CONTROL;

EID: 0002203439     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASDAM.2000.889471     Document Type: Conference Paper

References (15)

1. A. A.Lebedev, Semiconductors 33, 107,1999.
2. G.Pensl and W.J Choyke, Physica B 185,264,1993.
3. T.Dalibor et al,phys.stat.sol.(a) 162, 199, 1997.
4. F.Nava, P.Vanni, C.Lanzieri and C.Canali, Nucl.Instr.&Meth. A 437,354, 1999.
5. D.Donoval, J.de Sousa Pires, P.Tove, R.Harmen, Solid State Electron.32, 961, 1989.
6. C.Schröder, W.Hieland, R.Held and W.Loose, Appl.Phys.Lett. 68,1957, 1996.
7. P.Blood and J. W.Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States, Academic Press, London. UK 1992.
8. H.Zhang, Y.Aoyagi, S.Iwai and S.Namba, Appl.Phys.A 44,273,1987.
9. H.Okushi and Y.Tokomaru, Japanese J.Appl.Phys. 19, L335, 1980
10. T.Kimoto et al., Appl.Phys.Lett. 67,2833, 1995.
11. N.Achtziger and W.Witthuhn, Appl.Phys.Lett. 71, 110, 1997.
12. T.Dalibor, G.Pensl, N.Nordell and A.Schöner, Phys.Rev. B 55, 13618, 1997.
13. T.Dalibor et al., Materials Science Forum Vols. 264-268,553, 1998.
14. A.Evwaraye.S.R.Smith.M.Skowronski and W.C.Mitchell, J.Appl.Phys.74, 5269, 1993.
15. J.P.Doyle et al., J.Appl.Phys. 84, 1354, 1998.