A new generation of X-ray detectors based on silicon carbide

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 518, Issue 1-2, 2004, Pages 433-435

  Bertuccio, Giuseppe ^a   Casiraghi, Roberto ^a   Cetronio, Antonio ^b   Lanzieri, Claudio ^b   Nava, Filippo ^c  

^a POLITECNICO DI MILANO   (Italy)

^b ALENIA SPAZIO   (Italy)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

Semiconductor radiation detectors; Silicon Carbide; X ray detectors; X ray spectroscopy

Indexed keywords

CURRENT DENSITY; EPITAXIAL GROWTH; LEAKAGE CURRENTS; SILICON CARBIDE; SPECTROMETERS; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS; TRANSISTORS; X RAY SPECTROSCOPY;

ELECTRON HOLES; SCHOTTKY JUNCTIONS; X-RAY DETECTORS;

PARTICLE DETECTORS;

EID: 0942277293     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2003.11.050     Document Type: Conference Paper

References (7)

1. Cooper J.A., Agarwal A. Proc. IEEE. 90(6):2002;956.
2. Clarke R.C., Palmour J.W. Proc. IEEE. 90(6):2002;987.
3. Dulloo A.R., Ruddy F.H., Seidel J.G., Davison C., Flinchbaugh T., Daubenspeck T. IEEE Trans. Nucl. Sci. NS-46:1999;275.
4. Nava F., Vanni P., Lanzieri C., Canali C. Nucl. Instr. and Meth. A. 437:1999;354.
5. Bertuccio G., Casiraghi R., Nava F. IEEE Trans. Nucl. Sci. NS-48:2001;232.
6. CREE Inc., Durham, NC 27703, USA.
7. Bertuccio G., Casiraghi R. IEEE Trans. Nucl. Sci. NS-50(1):2003;175.