Development of radiation-hard materials for microstrip detectors

IEEE Transactions on Nuclear Science

Volumn 46, Issue 4 PART 1, 1999, Pages 839-843

  Dubbs, T ^a   Kroeger, W ^a   Nissen, T ^a   Pulliam, T ^a   Roberts, D ^a   Rowe, W A ^a   Sadrozinski, H F W ^a   Seiden, A ^a   Thomas, B ^a   Webster, A ^a   Alers, G ^a  

^a UNIVERSITY OF CALIFORNIA SANTA CRUZ   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CAPACITANCE; ENERGY GAP; LEAKAGE CURRENTS; MICROSTRIP DEVICES; RADIATION HARDENING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR COUNTERS; SILICON CARBIDE;

MICROSTRIP DETECTORS;

PARTICLE DETECTORS;

EID: 0033335649     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.790688     Document Type: Article

References (8)

1. H.F.-W. Sadrozinski, "Silicon microstrip detectors in high luminosity application", IEEE Trans Nucl. Sci. 45, 295 (1998) and references cited there.
2. H.-J. Ziock et al., Nuclear Instrum. Methods A342, 94 (1994)
3. Z. Li et al, "Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors", IEEE Trans Nucl. Sci 45, 585 (1998). B. Dezillie, Physics PhD Thesis Univ. of Grenoble (France) 1998.
4. MM. Zoeller et al, IEEE Trans Nucl. Sci. 44, 815 (1997)
5. C.J.S. Damerell, "Vertex Detectors", RAL P-95-008
6. Particle Data Group, The 1998 Review of Particle Physics, The European Physics Journal C3, 1 (1998)
7. F. H. Ruddy et al, IEEE Trans. Nuclear Sci, 45, 536 (1998)
8. R. Johnson et al, IEEE Trans. Nuclear Sci, 45, 927 (1998)