Effects of induction heating on temperature distribution and growth rate in large-size SiC growth system

Journal of Crystal Growth

Volumn 266, Issue 1-3, 2004, Pages 320-326

  Chen, Q S ^a   Gao, P ^a   Hu, W R ^a  

^a INSTITUTE OF MECHANICS   (China)

Author keywords

A1. Computer simulation; A1. Growth models; A2. Growth from vapor; A2. Single crystal growth; A3. Physical vapor deposition processes; B2. Semiconducting silicon compounds

Indexed keywords

COMPUTER SIMULATION; HIGH TEMPERATURE EFFECTS; INDUCTION HEATING; PHYSICAL VAPOR DEPOSITION; SILICON CARBIDE; SINGLE CRYSTALS; TEMPERATURE DISTRIBUTION;

GROWTH FROM VAPOR; GROWTH MODELS; SINGLE CRYSTAL GROWTH; SYSTEM COMPLEXITY;

CRYSTAL GROWTH;

EID: 2342512230     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.02.061     Document Type: Conference Paper

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