Numerical model for inductively heated cylindrical silicon tube growth system

Journal of Crystal Growth

Volumn 211, Issue 1, 2000, Pages 365-371

  Roy, A ^a   MacKintosh, B ^b   Kalejs, J P ^b   Chen, Q S ^a   Zhang, H ^a   Prasad, V ^a  

^a STONY BROOK UNIVERSITY   (United States)

^b ASE Americas Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; HEAT CONDUCTION; HEAT CONVECTION; HEAT RADIATION; MAGNETIC FIELDS; MATHEMATICAL MODELS; SILICON WAFERS; TEMPERATURE;

CYLINDRICAL SILICON TUBE; EDGE DEFINED FILM FED GROWTH PROCESS; MAGNETIC VECTOR POTENTIAL EQUATION; TUBE GROWTH;

CRYSTAL GROWTH;

EID: 0033901678     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00807-6     Document Type: Article

References (10)

1. M.J. Kardauskas, M.D. Rosenblum, B.H. Mackintosh, J.P. Kalejs, 25th IEEE PVSC, IEEE, New York, 1996, p. 383.
2. Harvey D. J. Crystal Growth. 104:1990;88.
3. J. Kalejs, in: R.D. McConnell (Ed.), Future Generation Photovoltaic Technologies, First NREL Conference, AIP, New York, 1997, p. 207.
4. Eriss L., Stormont R.W., Surek T., Taylor A.S. J. Crystal Growth. 50:1980;200.
5. Kalejs J.P., Menna A.A., Stormont R., Hutchinson J.W. J. Crystal Growth. 104:1990;14.
6. Rajendran S., Chao C.C., Hill D.P., Kalejs J.P., Overbye V. J. Crystal Growth. 109:1991;82.
7. Rajendran S., Holmes K., Menna A. J. Crystal Growth. 137:1994;77.
8. Q.-S. Chen, H. Zhang, V. Prasad, C.M. Balkas, N.K. Yushin, Proceedings of the National Heat Transfer Conference, Albuquerque, NM, 1999, NHTC99-222.
9. Zhang H., Moallemi M.K., Prasad V. Numer. Heat Transfer B. 29:1996;399.
10. T.F. Ciszek, The Capillary Action Shaping Technique and its Applications, Crystals: Growth, Properties and Applications, Vol. 5, 1981.