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Volumn 108, Issue 16, 2004, Pages 4946-4961

Imaging the Photoionization of Individual CdSe/CdS Core-Shell Nanocrystals on n- and p-Type Silicon Substrates with Thin Oxides

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC FIELD EFFECTS; ELECTROSTATICS; FERMI LEVEL; FLUORESCENCE; IMAGING TECHNIQUES; LUMINESCENT DEVICES; NANOSTRUCTURED MATERIALS; NATURAL FREQUENCIES; NITROGEN; PHOTOIONIZATION; POLARIZATION; SILICON;

EID: 2342461681     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp036907b     Document Type: Article
Times cited : (30)

References (39)
  • 22
    • 2342509311 scopus 로고    scopus 로고
    • note
    • The other histograms were not shown here only in the interest of space conservation.
  • 23
    • 2342456105 scopus 로고    scopus 로고
    • note
    • We do not know that the location of electrons within the particles is distributed as a Gaussian. But because of the lack of other information, a Gaussian distribution is used.
  • 24
    • 2342584392 scopus 로고    scopus 로고
    • note
    • This number was ∼0.3 V for the substrates used in our previous study. One substantial difference observed during the course of these experiments as compared to the prior work is that at this time no negative particles were observed.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.