Mg in GaN: The structure of the acceptor and the electrical activity

Physica Status Solidi C: Conferences

Volumn 0, Issue 6 SPEC. ISS., 2003, Pages 1770-1782

  Alves, H ^a   Leiter, F ^a   Pfisterer, D ^a   Hofmann, D M ^a   Meyer, B K ^a   Einfeld, S ^b   Heinke, H ^b   Hommel, D ^b  

^a JUSTUS LIEBIG UNIVERSITY   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; DOPING (ADDITIVES); GALLIUM NITRIDE; MAGNETIC RESONANCE SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY;

CRYSTAL FIELD VARIATIONS; ELECTRICAL ACTIVITY; OPTICALLY DETECTED MAGNETIC RESONANCE (ODMR); POTENTIAL FLUCTUATIONS;

MAGNESIUM PRINTING PLATES;

EID: 2342450980     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303121     Document Type: Conference Paper

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