Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentration

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 43-45

  Hofmann, Detlev M ^a   Burkhardt, Wolfgang ^a   Leiter, Frank ^a   Von Förster, Walter ^a   Alves, Helder ^a   Hofstaetter, Albrecht ^a   Meyer, Bruno K ^a   Romanov, Nikolai G ^b   Amano, Hiroshi ^c   Akasaki, Isamu ^c  

^a JUSTUS LIEBIG UNIVERSITY   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c Department of Electrical and Electronic Engineering ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPOSITION EFFECTS; CRYSTAL DEFECTS; ENERGY GAP; EXCITONS; INFRARED SPECTROSCOPY; MAGNESIUM; MAGNETIC RESONANCE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE; MAGNETIC CIRCULAR DICHROISM (MCD); OPTICALLY DETECTED MAGNETIC RESONANCE (ODMR) SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0033345564     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00402-0     Document Type: Article

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