Compensation effects in Mg-doped GaN epilayers

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 523-527

  Eckey, L ^a   Von Gfug, U ^a   Holst, J ^a   Hoffmann, A ^a   Schineller, B ^b   Heime, K ^b   Heuken, M ^c   Schon O ^c   Beccard, R ^c  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c AIXTRON AG   (Germany)

Author keywords

Compensation; Deep levels; GaN; P doping; Photoluminescence

Indexed keywords

CARRIER CONCENTRATION; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; MAGNESIUM; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

COMPENSATION EFFECTS; DONOR ACCEPTOR PAIR (DAP) EMISSION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032090813     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00344-3     Document Type: Article

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