Power amplification with silicon carbide MESFET

Microwave and Optical Technology Letters

Volumn 23, Issue 1, 1999, Pages 16-18

  Broch, J F ^a   Temcamani, F ^a   Pouvil, P ^a   Noblanc, O ^b   Prigent, J P ^c  

^a ENSEA   (France)

^b THALES   (France)

^c THOMCAST   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; MESFET DEVICES; POWER AMPLIFIERS; SILICON CARBIDE; SUBSTRATES;

BROADBAND POWER AMPLIFICATIONS;

BROADBAND AMPLIFIERS;

EID: 0032670428     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1098-2760(19991005)23:1<16::AID-MOP5>3.0.CO;2-F     Document Type: Article

References (5)

1. A.W. Morse, P.M. Esker, S. Siriam, and R.C. Clarke, Recent application of silicon carbide to high power microwave, IEEE MTT-S Dig, 1997, pp. 53-56.
2. ST. Allen et al., Silicon carbide MESFETs for high power S-band applications, IEEE MTT-S Dig, 1997, pp. 57-60.
3. O. Noblanc, C. Arnodo, E. Chartier, and C. Brylinski, Microwave power MESFET on 4H-SiC, Diamond and Related Mater, 1997, pp. 1508-1511.
4. T.T. Ha, Solid state microwave amplifier design, Wiley, New York, 1981.
5. O. Noblanc et al., Progress in the use 4H-SiC of semi-insulating wafers for microwave power MESFETs, ESCRM-98 Proc..