Microwave Power SiC MESFETs and GaN HEMTs

Proceedings IEEE Lester Eastman Conference on High Performance Devices

Volumn , Issue , 2002, Pages 181-185

  Zhang, A P ^a   Rowland, L B ^a   Kaminsky, E B ^a   Kretchmer, J W ^a   Beaupre, R A ^a   Garrett, J L ^a   Tucker, J B ^a   Edward, B J ^b   Foppes, J ^b   Allen, A F ^b  

^a GE GLOBAL RESEARCH   (United States)

^b Lockheed Martin NE SS Radar Systems   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVES; SILICON CARBIDE; SUBSTRATES;

MICROWAVE POWER;

MESFET DEVICES;

EID: 0038634411     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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5. K.E. Moore, C.E. Weitzel, K.J. Nordquist, L.L. Pond, J.W. Palmour, S. Allen, and C.H. Carter, "4H-SiC MESFET with 65.7% power added efficiency at 850 MHz," IEEE Electron Dev. Lett., 18(2), 69(1997)
6. O. Noblanc, C. Arnodo, C. Dua, E. Chartier, and C. Brylinski, "Power density comparison between microwave power MESFETs processed on conductive and semi-insulating Wafer," Mater. Sci. Forum, 338-342, 1247(2000)
7. S.C. Binari, P.B. Klein, and T.E. Kazior, "Trapping effects in GaN and SiC microwave FETs," Proc. of the IEEE, 90 (6), 1048(2002)
8. K.P. Hilton, M.J. Uren, D.G. Hayes, P.J. Wilding, and B.H. Smith, "Suppresion of instabilities in 4H-SiC microwave MESFETs," 8th IEEE Int. Symp. High Performance Electron Dev. for Microwave and Optoelectronic Applications, 67(2000)