An ultra wideband 5 W power amplifier using SiC MESFETs

Conference Proceedings- European Microwave Conference

Volumn 1, Issue , 2004, Pages 57-60

  Sayed, Ahmed ^a   Von Mark, Stefan Der ^a   Boeck, Georg ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITORS; FREQUENCIES; GAIN CONTROL; MESFET DEVICES; SILICON CARBIDE; SPECTRUM ANALYSIS;

FREQUENCY SPACING; OPERATING BANDWIDTH; TWO-TONE MEASUREMENT; WIDEBAND POWER AMPLIFIER;

POWER AMPLIFIERS;

EID: 18744388875     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. S. T. Allen et al, "Progress in high power SiC microwave MESFETs", IEEE MTT'S Digest, 1999
2. J. F. Broch et al, "Power amplification with Silicon Carbide MESFET", Microwave and Optical Tech. Letter, Vol. 23, 1999
3. F. Temcamani et al, "Silicon Carbide MESFETs performances and application in Broadcast Power Amplifiers", IEEE MTT'S Digest, pp. 641-644, 2001
4. J. C. M. Hwang, "Wide bandgap semiconductor wide bandwidth wide temperature range Power amplifiers", GaAs IC Symposium, pp. 51 - 54, 1999
5. W. L. Pribble et al, "Application of SiC MESFETs and GaN HEMTs in Power Amplifier Design", IEEE MTT'S Digest, pp. 1819-1822, 2002
6. H. Xue et al, "A high performance ultra-broadband RF choke microwave applications", IEE Colloquium on Evolving Tech. for Small Earth Station Hardware, pp. 1-4, 1995