Wide-bandgap-semiconductor wide-bandwidth wide-temperature-range power amplifiers

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1999, Pages 51-54

  Hwang, James C M ^a   Kehias, Lois T ^a   Cook, James A ^a   Calcatera, Mark C ^a   Sheppard, Scott T ^a  

^a LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ENERGY GAP; HIGH ELECTRON MOBILITY TRANSISTORS; NITRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE;

POWER AMPLIFIERS;

EID: 0033323146     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)