Evaluation of commercially available SiC MESFETs for phased array radar applications

IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications

Volumn 2002-January, Issue , 2002, Pages 166-171

  Walden, Mark G ^a   Knight, Mathew ^a  

^a Roke Manor Research Limited   (United Kingdom)

Author keywords

Hysteresis; MESFETs; Phase change materials; Phased arrays; Photonic band gap; Power generation; Pulse measurements; Radar applications; Silicon carbide; Voltage

Indexed keywords

ANTENNA PHASED ARRAYS; ELECTRIC POTENTIAL; ELECTRON DEVICES; ENERGY GAP; HYSTERESIS; MESFET DEVICES; PHASE CHANGE MATERIALS; PHOTONIC BAND GAP; POWER GENERATION; RADAR; RADAR EQUIPMENT; SILICON CARBIDE;

II-IV SEMICONDUCTORS; MESFETS; PHASED-ARRAY RADAR APPLICATIONS; PULSE MEASUREMENTS; RADAR APPLICATIONS; WIDE BAND GAP;

RADAR MEASUREMENT;

EID: 23144464032     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDMO.2002.1174949     Document Type: Conference Paper

References (2)

1. RJ Trew, JB Yan, PM Mock, "The Potential of Diamond and SiC Electronic Devices for Microwave and Millimeter-wave Power, Applications" Proc IEEE, May 1991, Vol 79, No. 5, pp598-620
2. M, Walden, "Pulsed Power Operation of Commercially Available Silicon Carbide MESFETS" Conference Proceedings GAAS 2001, Sept 2001, pp319-322.