SiC MESFET hybrid amplifier with 30-W output power at 10 GHz

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Volumn , Issue , 2000, Pages 173-177

  Sadler, Robert A ^a   Allen, Scott T ^a   Pribble, William L ^a   Alcorn, Terry S ^a   Sumakeris, Joseph J ^a   Palmour, John W ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CAPACITORS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); GOLD; MICROSTRIP LINES; NICKEL; OHMIC CONTACTS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SUBSTRATES;

CONTRAST-ENHANCEMENT MATERIAL; HYBRID AMPLIFIER; X-BAND DEVICE;

MESFET DEVICES;

EID: 0034593638     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. S. T. Allen, W. L. Pribble, R. A. Sadler, T. S. Alcorn, Z. Ring, and J. W. Palmour, "Progress in High-Power SiC Microwave MESFETs," 1999 IEEE MTT-S International Microwave Symp. Digest, Paper MO4B-1, pp. 321-324.
2. R. A. Sadler, S. T. Allen, T. S. Alcorn, W. L. Pribble, J. J. Sumakeris, and J. W. Palmour, "SiC MESFET with Output Power of 50 Watts CW at S-Band," Tech. Digest of 56th Annual Device Research Conf., Charlottesville, VA, June 22-24, 1998, pp. 92-93.
3. S. T. Allen, R. A. Sadler, T. S. Alcorn, J. W. Palmour, and C. H. Carter, "Silicon Carbide MESFET's for High-Power S-Band Applications," 1997 IEEE MTT-S International Microwave Symp. Digest, Paper TU1C-4, pp. 57-60.