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Volumn 78, Issue 17, 2001, Pages 2521-2523

Switching behavior of semiconducting carbon nanotubes under an external electric field

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[No Author keywords available]

Indexed keywords


EID: 0035938309     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1367295     Document Type: Article
Times cited : (59)

References (17)
  • 10
    • 0039516150 scopus 로고    scopus 로고
    • note
    • The field is assumed to be noncentrosymmetric with respect to the tube axis, as in the experiments.
  • 11
    • 0040701422 scopus 로고    scopus 로고
    • M. Di Ventra and P. Fernandez, Phys. Rev. B 56, R12698 (1997); in the present case, modification of off-diagonal terms in the Hamiltonian due to the external gate field has a small effect on the transmission probability.
    • (1997) Phys. Rev. B , vol.56
    • Di Ventra, M.1    Fernandez, P.2
  • 13
    • 0039516149 scopus 로고    scopus 로고
    • note
    • If an extra non-Ohmic contact resistance is added to the resistance calculated with the present coherent approach, the total resistance would saturate to this extra resistance.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.