Failure modes of flip chip solder joints under high electric current density

Journal of Electronic Packaging

Volumn 127, Issue 2, 2005, Pages 157-163

  Basaran, C ^a   Ye, H ^a   Hopkins, D C ^a   Frear, D ^b   Lin, J K ^b  

^a UNIVERSITY AT BUFFALO   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Current Stressing; Electromigration; Flip Chip; High Current Density; Nanoelectronics; Power Electronics; Solder Joint Reliability; Thermomigration

Indexed keywords

ELECTRIC CURRENTS; ELECTROMIGRATION; FLIP CHIP DEVICES; GRAIN BOUNDARIES; INTERFACES (MATERIALS); POWER ELECTRONICS; PRINTED CIRCUIT BOARDS; SCANNING ELECTRON MICROSCOPY; TEMPERATURE MEASUREMENT;

CURRENT STRESSING; FAILURE MODES; FLIP CHIP; HIGH CURRENT DENSITY; NANOELECTRONICS; SOLDER JOINT RELIABILITY; THERMOMIGRATION;

SOLDERED JOINTS;

EID: 22944450021     PISSN: 10437398     EISSN: None     Source Type: Journal    
DOI: 10.1115/1.1898338     Document Type: Article

References (28)

1. Lee, T. Y., Tu, K. N., Kuo, S. M., and Frear, D. R., 2001, "Electromigration of Eutectic SnPb Solder Interconnects for Rip Chip Technology," J. Appl. Phys., 89(6), pp. 3189-3194.
2. 0.7 Flip Chip Solder Bumps and Under-bump Metallization," J. Appl. Phys., 90(9), pp. 4502-4508.
3. Ye, H., Basaran, C., and Hopkins, D., 2002, "Experiment Study on Reliability of Solder Joints Under Electrical Stressing-Nano-indentation, Atomic Flux Measurement," Proceedings of 2002 International Conference on Advanced Packaging and Systems, Reno, Nevada.
4. Ye, H., Lin, M., and Basaran, C., 2002, "Failure Modes and FEM Analysis of Power Electronic Packaging," Finite Elem. Anal. Design, 38(7), pp. 601-612.
5. Ye, H., Basaran, C., and Hopkins, D., 2003, "Thermomigration in Pb-Sn Solder Joints Under Joule Heating during Electric Current Stressing," Appl. Phys. Lett., 82(8), pp. 1045-1047.
6. Ye, H., Hopkins, D., and Basaran, C., 2002, "Measurement and Effects of High Electrical Current Stress in Solder Joints," Proceedings of the 35th International Symposium on Microelectronics, Denver, Colorado, pp. 427-432.
7. Ye, H., Basaran, C., and Hopkins, D., 2003, "Damage Mechanics of Microelectronics Solder Joints under High Current Densities," Int. J. Solids Struct., 40(15), pp. 4021-4032.
8. Li, Z., Wu, G., Wang, Y., Li, Z., and Sun, Y., 1999, "Numerical Calculation of Electromigration under Pulse Current with Joule Heating," IEEE Electron Device Lett., 46(1), pp. 70-77.
9. Lloyd, J. R., 1999, "Electromigration in Integrated Circuit Conductors," J. Phys. D, 32(17), pp. R109-R118.
10. Blech, I. A., 1976, "Electromigration in Thin Aluminum Films on Titanium Nitride," J. Appl. Phys., 47(4), pp. 1203-1208.
11. Blech, I. A., and Herring, C., 1976, "Stress Generation by Electromigration," Appl. Phys. Lett., 29(3), pp. 131-133.
12. Blech, I. A., and Tai, K. L., 1977, "Measurement of Stress Gradients Generated by Electromigration," Appl. Phys. Lett., 30(8), pp. 387-389.
13. Blech, I. A., and Kinsbron, E., 1975, "Electromigration in Thin Gold Films on Molybdenum Surfaces," Thin Solid Films, 25, pp. 327-334.
14. Kirchheim, R., 1992, "Stress and Electromigration in Al-lines of Integrated-Circuits," Acta Metall. Mater., 40(2), pp. 309-323.
15. Korhonen, M. A., Borgesen, P., Tu, K. N., and Li, C.-Y., 1993, "Stress Evolution due to Electromigration in Confined Metal Lines," J. Appl. Phys., 73(8), pp. 3790-3799.
16. Park, Y. J., Andleigh, V. K., and Thompson, C. V., 1999, "Simulations of Stress Evolution and the Current Density Scaling of Electromigration-induced Failure Times in Pure and Alloyed Interconnects," J. Appl. Phys., 85(7), pp. 3546-3555.
17. Povirk, G. L., 1997, "Numerical Simulations of Electromigration and Stress-driven Diffusion in Polycrystalline Interconnects," Mater. Res. Soc. Symp. Proc., 473, pp. 337-342.
18. Rzepka, S., Korhonen, M. A., Weber, E. R., and Li, C. Y., 1997, "Three-dimensional Finite Element Simulation of Electro and Stress Migration Effects in Interconnect Lines," Mater. Res. Soc. Symp. Proc., 473, pp. 329-335.
19. Sarychev, M. E., and Zhinikov, Yu. V., 1999, "General Model for Mechanical Stress Evolution during Electromigration," J. Appl. Phys., 86(6), pp. 3068-3075.
20. Ye, H., Basaran, C., and Hopkins, D., 2003, "Numerical Simulation of Stress Evolution During Electromigration in IC Interconnect Lines,"IEEE Trans. Compon., Packag. Manuf. Technol., Part A, 26(3), pp. 673-681.
21. Gleixner, R. J., and Nix, W. D., 1999, "A Physically Based Model of Electromigration and Stress-induced Void Formation in Microelectronic Intercon nects," J. Appl. Phys., 86(4), pp. 1932-1944.
22. Gleixner, R. J., and Nix, W. D., 1996, "An Analysis of Void Nucleation in Passivated Interconnect Lines Due to Vacancy Condensation and Interface Contamination," Materials Reliability in Microelectronics VI, San Francisco, CA, April 8-12 1996, pp. 475-480.
23. Raj, R., and Ashby, M. F., 1975, "Intergranular Fracture at Elevated-Temperature," Acta Metall., 23(6), pp. 653-666.
24. Hirth, J. P., and Nix, W. D., 1985, "Analysis of Cavity Nucleation in Solids Subjected to External and Internal Stresses," Acta Metall., 33(3), pp. 359-368.
25. Flinn, P. A., 1995, "Mechanical-Stress in Vlsi Interconnections - Origins, Effects, Measurement, and Modeling," MRS Bull., 20(11), pp. 70-73.
26. Raj, R., 1978, "Nucleation of Cavities at 2Nd Phase Particles in Grain- Boundaries," Acta Metall., 26(6), pp. 995-1006.
27. Xue, Q., Meyers, M. A., and Nesterenko, V. F., 2002, "Self- organization of Shear Bands in Titanium and Ti-6Al-4V Alloy," Acta Mater., 50(3), pp. 575-596.
28. Kwok, T., and Ho, P. S., in Gupta, D., and Ho, P. S., (eds.), Diffusion Phenomena in Thin Films and Microelectronic Materials, Noyes, Park Ridge, NJ, 1988.