Low voltage stress-induced leakage current in 1.4-2.1 nm SiON and HfSiON gate dielectric layers

Semiconductor Science and Technology

Volumn 20, Issue 8, 2005, Pages 668-672

  O'Connor, Robert ^a   McDonnell, Stephen ^a   Hughes, Greg ^a   Degraeve, Robin ^b   Kauerauf, Thomas ^b  

^a DUBLIN CITY UNIVERSITY   (Ireland)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CATHODES; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC DEVICES; ELECTRIC POTENTIAL; ELECTRON TRAPS; ELECTRON TUNNELING; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; SILICON COMPOUNDS;

BANDGAPS; DIELECTRIC LAYERS; STRESS-INDUCED LEAKAGE CURRENTS (SILC); TRAP DENSITY;

LEAKAGE CURRENTS;

EID: 22844452783     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/8/003     Document Type: Article

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