SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 241-246

Stress-induced leakage current at low field in NMOS and PMOS devices with ultra-thin nitrided gate oxide

(5) Fadlallah, M a Ghibaudo, G b Bidaud, M c Simonetti, O d Guyader, F d

a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE (France)

b IMEP LAHC (France)

c NXP SEMICONDUCTORS (Netherlands)

d STMICROELECTRONICS (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; GATES (TRANSISTOR); LEAKAGE CURRENTS; NITRATION; NITROGEN; OXIDE SUPERCONDUCTORS;

STRESS-INDUCED LEAKAGE CURRENT (SILC); VALENCE BANDS;

MOS CAPACITORS;

EID: 1642618919 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2003.12.044 Document Type: Conference Paper

Times cited : (5)

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