Charge trapping in MOSFETs with HfSiON dielectrics during electrical stressing

Microelectronic Engineering

Volumn 77, Issue 3-4, 2005, Pages 302-309

  O'Connor, Robert ^a   Hughes, Greg ^a   Degraeve, Robin ^b   Kaczer, Ben ^b  

^a DUBLIN CITY UNIVERSITY   (Ireland)

^b IMEC   (Belgium)

Author keywords

Charge trapping; Hafnium silicate; High k; Reliability

Indexed keywords

ANNEALING; ANODES; DEGRADATION; DEPOSITION; HAFNIUM COMPOUNDS; RELIABILITY; SILICON COMPOUNDS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

CHARGE TRAPPING; HAFNIUM SILICATE; HIGH-K; OXIDE STRESS;

MOSFET DEVICES;

EID: 15344347038     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.11.012     Document Type: Article

References (10)

1. M.L. Green, et al., Appl. Phys. Rev. 90, (5) 2057-2121
2. O. Han Microelectron. Eng. 66 2003 643
3. F. Lime Solid State Electron. 47 2003 1617
4. Y.H. Kim Microelectron. Reliab. 44 2004 183
5. R. O'Connor, et al., 2004 WODIM (submitted)
6. Y.B. Park IEEE T. Electron. Dev. 45 1998 1361
7. M. Suzuki Nucl. Instrum. Meth. B 219-220 2004 851
8. R. O'Connor Microelec. Eng. 72 2004 61
9. Y.M. Lee Solid State Electron. 47 2003 71 76
10. S.M. Sze Physics of Semiconductor Devices 1981 Wiley p. 441