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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 5 A, 2005, Pages 2993-2994

Reoxidation behavior of high-nitrogen oxynitride films after O2 and N2O treatment

(5) Lin, Bo Chun a Chang, Kow Ming b Lai, Chiung Hui b,c Hsieh, Kuang Yeu d Yao, June Min e

a TECHNOLOGY AND SCIENCE INSTITUTE OF NORTHERN TAIWAN (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

c CHUNG CHOU INSTITUTE OF TECHNOLOGY (Taiwan)

d MACRONIX INTERNATIONAL CO LTD (Taiwan)

e FAR EAST UNIVERSITY (Taiwan)

Author keywords

Atomic oxygen; Nitrous oxide; Oxynitride; Rapid thermal oxidation; Zig zag

Indexed keywords

ATOMIC OXYGEN; NITROUS OXIDE; OXYNITRIDES; RAPID THERMAL OXYGEN; ZIG-ZAG;

CONCENTRATION (PROCESS); DIFFUSION; ELLIPSOMETRY; FILM GROWTH; NITROGEN COMPOUNDS; OZONIZATION; SILICON WAFERS; THIN FILMS;

OXIDATION;

EID: 22544446750 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.2993 Document Type: Article

Times cited : (1)

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