Quantum dot/substrate interaction in InAs/In 0.53Ga 0.47As/InP(001)

Applied Physics Letters

Volumn 84, Issue 4, 2004, Pages 511-513

  Liao, X Z ^a   Zhu, Y T ^a   Qiu, Y M ^b   Uhl, D ^b   Xu, H F ^c  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MASS TRANSPORT; STRAIN ENERGY;

CRYSTAL LATTICES; DIFFUSION; DISLOCATIONS (CRYSTALS); IMAGING TECHNIQUES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN; SUBSTRATES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1242329857     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1642754     Document Type: Article

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