Dielectric and electrical properties of SrTiO (3 ± y)-(SiO2)x thin films

Journal of Physics D: Applied Physics

Volumn 38, Issue 14, 2005, Pages 2446-2451

  Chou, Hsiu Yu ^a   Chen, Teng Ming ^b   Tseng, Tseung Yuen ^b  

^a TA HWA INSTITUTE OF TECHNOLOGY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION; CURRENT DENSITY; DEPOSITION; DIELECTRIC MATERIALS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; GATES (TRANSISTOR); LEAKAGE CURRENTS; SILICA; STRONTIUM COMPOUNDS;

ANNEALING TEMPERATURE; DIELECTRIC BREAKDOWN; GATE DIELECTRICS; LEAKAGE CURRENT DENSITY;

THIN FILMS;

EID: 22144461068     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/38/14/022     Document Type: Article

References (17)

1. Ezhilvalavan S and Tseng T Y 1999 J. Mater. Sci.: Mater. Electron. 10 9
2. Gusev E P, Copel M, Cartier W, Baumvol I J R, Krug C and Gribelyuk M A 2000 Appl. Phys. Lett. 76 176
3. Mori H and Ishiwara H 1991 Japan. J. Appl. Phys. 30 L1415
4. Lucovsky G and Rayner G B Jr 2000 Appl. Phys. Lett. 77 2912
5. Harris H, Choi K, Medhta N, Chandolu A, Biswas N, Kipshidze G, Nikishin S, Gangopadhyay S and Tempkin H 2002 Appl. Phys. Lett. 81 1065
6. Xu Z, Houssa M, De Gendt S and Heyns M 2002 Appl. Phys. Lett. 80 1975
7. Liu C Y, Lue H T and Tseng T Y 2002 Appl. Phys. Lett. 81 4416
8. Russack M A, Jahnes C V and Katz P E 1989 J. Vac. Sci. Technol. A 7 1248
9. Neumayer D A and Cartier E 2001 J. Appl. Phys. 90 1801
10. Thomas R, Dube D C, Kamalasanan M N, Chandra S and Bhalla A S 1997 J. Appl. Phys. 82 4484
11. Radhakrishnan K, Tan C L, Zheng H Q and Ng G I 2000 J. Vac. Sci. Technol. A 18 1638
12. Park M B, Cho N H and Kim C D 2002 J. Electroceram. 9 37
13. Kim N K, Yoon S G, Lee W J and Kim H G 1997 J. Mater. Res. 12 1160
14. Sze S M 1969 Physics of Semiconductor Devices (New York: Wiley) p 492
15. Ezhilvalavan S and Tseng T Y 1998 J. Appl. Phys. 83 4797
16. Tsai M S and Tseng T Y 1998 J. Electrochem. Soc. 145 2853
17. Mikhaelashvili V, Betzer Y, Prudnikov I, Orenstein M, Ritter D and Eisenstein G 1998 J. Appl. Phys. 84 6747