Field emission characteristics of GaN roughned with H2 plasma

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 445-448

  Kimura, Chiharu ^a   Yamamoto, Tomohide ^a   Sugino, Takashi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ANODES; ATOMIC FORCE MICROSCOPY; CATHODES; ELECTRON EMISSION; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SEMICONDUCTOR PLASMAS; SILICON WAFERS; SUBSTRATES; SURFACE ROUGHNESS;

ETCHING RATE; FIELD EMISSION; HYDROGEN PLASMA;

GALLIUM NITRIDE;

EID: 0037207751     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1524137     Document Type: Article

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