Comparison of the effect of boron and nitrogen incorporation on the nucleation behavior and electron-field-emission properties of chemical-vapor-deposited diamond films

Applied Physics Letters

Volumn 77, Issue 9, 2000, Pages 1277-1279

  Lin, I Nan ^a   Perng, Kuoguang ^a   Lee, Lien Hsin ^a   Shih, Chuan Feng ^a   Liu, Kuo Shung ^a   Evans, Gariant A ^b   Steeds, John W ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009590113     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1289903     Document Type: Review

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