Inductively coupled plasma etching of HgCdTe using a CH4-based mixture

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 740-745

  Laffosse, E ^a   Baylet, J ^a   Chamonal, J P ^a   Destefanis, G ^a   Cartry, G ^b   Cardinaud, C ^b  

^a CEA LETI   (France)

^b INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

Author keywords

CH4 based plasma; HgCdTe; Inductively coupled plasma (ICP) etching; Langmuir probe

Indexed keywords

INDUCTIVELY COUPLED PLASMA; MERCURY COMPOUNDS; PLASMA ETCHING; PROBES; REACTIVE ION ETCHING; SPUTTERING;

CH4-BASED PLASMA; HGCDTE; INDUCTIVELY COUPLED PLASMA (ICP) ETCHING; LANGMUIR PROBE;

SEMICONDUCTOR MATERIALS;

EID: 21644476464     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0013-9     Document Type: Conference Paper

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