Influence of the gas mixture on the reactive ion etching of InP in CH4-H2 plasmas

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 5, 1997, Pages 1733-1740

  Feurprier, Y ^a   Cardinaud, Ch ^a   Turban, G ^a  

^a UNIVERSITÉ DE NANTES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000782292     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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