Characterization of the CH4/H2/Ar high density plasma etching process for HgCdTe

Journal of Electronic Materials

Volumn 28, Issue 4, 1999, Pages 347-354

  Eddy Jr , C R ^a,b   Leonhardt, D ^a   Shamamian, V A ^a   Meyer, J R ^a   Hoffman, C A ^a   Butler, J E ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; DENSITY (SPECIFIC GRAVITY); HYDROGEN; IONS; MASS SPECTROMETRY; METHANE; PLASMA ETCHING; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACES; TEMPERATURE;

HIGH DENSITY PLASMA ETCHING; MERCURY CADMIUM TELLURIDE; NEUTRAL FLUXES;

MERCURY COMPOUNDS;

EID: 0033116905     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0231-7     Document Type: Article

References (25)

1. W.D. Lawson, S. Nielson, E.H. Putley and A.S. Young, J. Phys. Chem. Solids 9, 325 (1959).
2. J.N. Schulman and T.C. McGill, Appl. Phys. Lett. 34, 663 (1979).
3. T.H. Myers, J.R. Meyer, C.A. Hoffman and L.R. Ram-Mohan, Appl. Phys. Lett. 61, 1814 (1992).
4. A.R. Reisinger, K.A. Harris, T.H. Myers, R.W. Yanka, L.M. Mohnkern and C.A. Hoffman, Appl. Phys. Lett. 61, 699 (1992).
5. Y. Qiu, L. He, S. Yuan, C.R. Becker and G. Landwehr, Appl. Phys. Lett. 62, 1134 (1993).
6. J.R. Meyer, F.J. Bartoli, C.A. Hoffman and L.R. Ram-Mohan, Phys. Rev. Lett. 64, 1963 (1990).
7. C.R. Eddy, Jr., D. Leonhardt, V.A. Shamamian, R.T. Holm, O.J. Glembocki, J.R. Meyer, C.A. Hoffman and J.E. Butler, Infrared Applications of Semiconductors-Materials, Processing and Devices, ed. M.O. Manasreh, T.H. Myers, F.H. Julien and J.E. Colon, 450 (Pittsburgh, PA: Materials Research Society, 1997), p. 275.
8. R.C. Keller, M. Seelmann-Eggebert and H.J. Richter, J. Electron. Mater. 25, 1270 (1996).
9. R.C. Keller, M. Seelmann-Eggebert and H.J. Richter, Appl. Phys. Lett. 67, 3750 (1995).
10. K.A. Harris, D.W. Endres, R.W. Yanka, L.M. Mohnkern, A.R. Reisinger, T.H. Myers, A.N. Klymachyov, C.M. Vitrus and N.S. Dalal, J. Electron. Mater. 24, 1201 (1995).
11. C.R. Eddy, Jr., R.J. Tonucci, D.H. Pearson, J.R. Meyer and C.A. Hoffman, Narrow Gap Semiconductors, Proc. 7th Intl. Conf. on Narrow Gap Semiconductors, Santa Fe, NM, 8-12 January 1995, ed. J.L. Reno, 144 (Philadelphia, PA: Institute of Physics, 1995), p. 364.
12. R.C. Keller, M. Seelmann-Eggebert and H.J. Richter, J. Electron. Mater. 24, 1155 (1995).
13. T.H. Myers, A.N. Klymachyov, C.M. Vitus, N.S. Dalal, D. Endres, K.A. Harris, R.W. Yanka and L.M. Mohnkern, Appl. Phys. Lett. 66, 224 (1995).
14. G.J. Orloff and P.B. Smith, J. Vac. Sci. Technol. A 12, 1252 (1994).
15. G.J. Orloff, J. A. Woollam, P. He, W.A. McGahan, J.R. McNeil, R.D. Jacobson and B. Johs, Thin Solid Films 233, 46 (1993).
16. C.R. Eddy, Jr., C.A. Hoffman, J.R. Meyer and E.A. Dobisz, J. Electron. Mater. 22, 1055 (1993).
17. C.R. Eddy, Jr., E.A. Dobisz, J.R. Meyer and C.A. Hoffman, J. Vac. Sci. Technol. A 11, 1763 (1993).
18. C.R. Eddy, Jr., E.A. Dobisz, C.A. Hoffman and J.R. Meyer, Appl. Phys. Lett. 62, 2362 (1993).
19. R.T. Holm, patent pending.
20. D.E. Aspenes, Properties of Gallium Arsenide, 2nd Ed., EMIS Datareviews Series No. 2, (London: INSPEC, The Institute of Electrical Engineers, 1990), p. 153.
21. D.H. Pearson and R.J. Tonucci, Science 270, 68 (1995).
22. C.R. Eddy, Jr., D. Leonhardt, S.R. Douglass, V.A. Shamamian, B.D. Thorns and J.E. Butler, will appear in J. Vac. Sci. Technol. A May/June (1999).
23. C.R. Eddy, Jr., O.J. Glembocki, D. Leonardt, V.A. Shamamian, R.T. Holm, B.D. Thoms, J.E. Butler and S.W. Pang, J. Electron. Mater. 26, 1320 (1997).
24. C.J. Mogab and H.J. Levinstein, J. Vac. Sci. Technol. 17, 721 (1980).
25. S.J. Pearton, Intl. J. Modern Phys. B 8, 1093 (1994).