Electrical and structural properties of low-resistance Pt/Ag/Au ohmic contacts to p-type GaN

Solid-State Electronics

Volumn 49, Issue 7, 2005, Pages 1213-1216

  Rajagopal Reddy, V ^a   Ramesha Reddy, N ^a   Choi, Chel Jong ^b  

^a UNIVERSITY OF MYSORE   (India)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Electrical and structural properties; p GaN; Pt Ag Au ohmic contacts; Spectroscopy; X ray diffraction

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; ELECTRIC RESISTANCE; GALLIUM NITRIDE; HALL EFFECT; INTERFACES (MATERIALS); PLATINUM COMPOUNDS; SURFACE ROUGHNESS; X RAY DIFFRACTION;

CONTACT RESISTIVITY; ELECTRICAL AND STRUCTURAL PROPERTIES; P-GAN; PT/AG/AU OHMIC CONTACTS;

OHMIC CONTACTS;

EID: 21444444384     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.05.005     Document Type: Article

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