SCOPUS 정보 검색 플랫폼

Volumn 485, Issue 1-2, 2005, Pages 59-65

The effect of deposition temperature on the properties of TiN diffusion barriers prepared by atomic layer chemical vapor deposition

(3) Cheng, Hsyi En a Lee, Wen Jen a Hsu, C M a

a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

Author keywords

Auger electron spectroscopy; Chemical vapor deposition; Metalization; Titanium nitride

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); DIFFUSION; FILM GROWTH; IMPURITIES; MICROSTRUCTURE; TITANIUM NITRIDE;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION; DEPOSITION TEMPERATURE; FILM DEPOSITION; METALIZATION;

THIN FILMS;

EID: 21244463832 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2005.03.049 Document Type: Article

Times cited : (29)

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