A novel strained Si0.7Ge0.3 surface-channel pMOSFET with an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack

IEEE Electron Device Letters

Volumn 24, Issue 3, 2003, Pages 171-173

  Wu, D ^a   Lindgren, A C ^a   Persson, S ^a   Sjoblom G ^b   Von Haartman, M ^a   Seger, J ^a   Hellstrom P E ^a   Olsson, J ^b   Blom, H O ^b   Zhang, S L ^a   Ostling M ^a   Vainonen Ahlgren, E ^c   Li, W M ^c   Tois, E ^c   Tuominen, M ^c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UPPSALA UNIVERSITY   (Sweden)

^c ASM Microchemistry Oy   (Finland)

Author keywords

Atomic layer chemical vapor deposition (ALD); High ; Metal gate; MOSFET; SiGe; Surface channel

Indexed keywords

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GATES (TRANSISTOR); INTERFACES (MATERIALS); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; TITANIUM NITRIDE; TRANSCONDUCTANCE;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION TECHNIQUE; GATE STACK; SILICON GERMANIUM; SURFACE CHANNEL;

MOSFET DEVICES;

EID: 0037600581     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.809524     Document Type: Letter

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